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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1827 DESCRIPTION With TO-220 package Complement to type 2SA769 Collector current :IC=4A Collector dissipation :PC=30W@TC=25ae APPLICATIONS For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-220) and symbol HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) SEM GE Open base CONDITIONS OND IC TOR UC VALUE 80 80 5 4 UNIT V V V A W ae ae Open emitter Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 30 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC1827 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 80 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ;IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A 1.5 V ICBO Collector cut-off current VCB=80V;IE=0 10 |I A IEBO Emitter cut-off current hFE DC current gain VEB=5V; IC=0 10 |I A IC=1A ; VCE=4V fT Transition frequency HAN INC SEM GE IC=0.5A ; VCE=2V OND IC 60 TOR UC 240 8 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1827 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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